This equipment is the world's first metal two-dimensional semiconductor single crystal organic chemical vapor deposition (MOCVD) system, specifically designed for the research and mass production of high-quality, large-area single crystal transition metal chalcogenides (such as MoS ₂, WS ₂, WSe ₂, etc.). The system is equipped with 4-channel metal organic sources and 2-channel gaseous precursors, which can achieve precise control of key parameters such as source flow rate and temperature, and integrate real-time monitoring modules to effectively ensure the stability and consistency of the epitaxial process. The prepared two-dimensional semiconductor thin film has advantages such as in-plane uniformity of up to 99.5%, controllable number of layers, and low defect density. At any position on an 8-inch single crystal circle, the carrier mobility exceeds 100   cm ²/V · s, and the photoelectric responsivity is as high as 10 ⁵ A/W. The device performance is significantly better than traditional CVD technology, making it suitable for the integrated manufacturing of next-generation high-performance electronic and optoelectronic devices.